Erase and program method of flash memory device for increasing program speed of flash memory device

ABSTRACT

Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.

FIELD OF THE INVENTION

The present invention relates to flash memory devices, and moreparticularly, to erase and program methods of flash memory devices.

DISCUSSION OF RELATED ART

In general, memory cells of a flash memory device can be classified intoa Single-Level Cell (hereinafter referred to as “SLC”) and a Multi-LevelCell (hereinafter referred to as “MLC”) depending on the number of databits stored. One (1) bit data having a logic value of “1” or “0” can bestored in the SLC. Two (2) bits data having a logic value of any one of“11”, “10”, “01” and “00” can be stored in the MLC. Therefore, flashmemory devices including MLCs are mainly used for high-integratedsemiconductor devices requiring a large capacity of data space.

An erase operation of the flash memory device including MLCs isperformed is generally performed on a memory-cell-block basis. The eraseoperation includes a pre-program process, the erase process and a postprogram, which are sequentially executed.

The erase operation of the flash memory device including MLCs will nowbe described in short with reference to FIG. 1. FIG. 1 is a view showingvariation in threshold voltages of MLCs depending on the erase processof the flash memory device having MLCs in the related art.

An erase operation of MLCs having threshold voltages distributed as ingraphs (G11 to G14) of FIG. 1( a) will be first described.

The graph (G11) indicates threshold voltage distribution of the MLCs inwhich data “11” are stored. The graph (G12) indicates threshold voltagedistribution of the MLCs in which data “10” are stored. The graph (G13)designates the threshold voltage distribution of the MLCs in which data“00” are stored. The graph (G14) indicates threshold voltagedistribution of the MLCs in which data “01” are stored. The graphs (G11to G14) exist within a voltage range (W1) defined by voltages (V1 andV2) (i.e., the threshold voltages of the MLCs are distributed within thevoltage range (W1)).

If the MLCs having the threshold voltages distributed as shown in thegraphs (G11 to G14) are pre-programmed, the threshold voltages of theMLCs are distributed within the voltage range (W2) defined by voltages(V3 and V4), as shown in graphs (G21 to G24 of FIG. 1( b). Thepre-program process of the MLCs is not executed by a page buffer, but isexecuted by a circuit that directly discharges a sensing node using aground voltage on a memory-cell-block basis.

In this case, a width of the voltage range (W2) is narrower than that ofthe voltage range (W1). This is because MLCs (i.e., the MLCs distributedas in by the graph (G11)), which have a threshold voltage lower thanthat of MLCs (i.e., the MLCs distributed as in the graph (G14)) having ahigh threshold voltage, are more programmed and a difference between thethreshold voltages of the MLCs becomes narrow as in the graphs (G21 toG24).

Thereafter, if the MLCs having the threshold voltages distributed asshown in the graphs (G21 to G24) are erased, the threshold voltages ofthe MLCs are distributed within a voltage range (W3), which is definedby voltages (V5 and V6), as shown in graphs (G31 to G34) of FIG. 1( c).

If the MLCs are post programmed in order to prevent MLCs from being overerased, the threshold voltages of the MLCs are distributed within avoltage range (W4), which is defined by voltages (V7 and V8), as shownin graphs (G41 to G44) of FIG. 1( d). In this case, the thresholdvoltages of the MLCs must be lower than the voltage (V8).

Therefore, the voltage (V8) is set to a verify voltage, which is appliedto a word line in a verify process performed after the post-programprocess. In the erase process of the flash memory device in the relatedart, however, the voltage ranges (W2 to W4) in which the thresholdvoltages of the MLCs are distributed are relatively wide. Therefore,after the erase process, MLCs whose threshold voltage is the same as orhigher than the voltage (V8) may exist.

As a result, in the erase process of the flash memory device in therelated art, the threshold voltages of the MLCs are relatively widelydistributed. Therefore, the probability that fail occurs in the eraseprocess of the MLCs is high. Furthermore, in the erase process of theflash memory device in the related art, MLCs have threshold voltagesthat are relatively widely distributed (i.e., not having a goodthreshold voltage distribution). Therefore, a problem arises because anoverall program time is increased in a subsequent program process.

Meanwhile, the program operation of a flash memory device including MLCswill be described in short below with reference to FIG. 2. FIG. 2 a is aview showing variation in a voltage applied to a word line in theprogram process of the flash memory device having MLCs in the relatedart. There is shown in FIG. 2 a voltage of a word line, which is variedas the program process of the flash memory device using the IncrementalStep Pulse Programming (ISPP) method.

As shown in FIG. 2 a, the voltage of the word line is increased by astep voltage (Vs) beginning a program voltage (Vpgm1) as a start voltagewhenever the number of program cycles increases.

In more detail, in a program period (PGM1), a program voltage (one ofVpgm1 to VpgmJ) (J is an integer) is applied to the word line during atime (P1) and a verify voltage (Vver1) is applied to the word lineduring a time (F1). The verify voltage (Vver1) is lower than a thresholdvoltage of a MLC in which data “10” are stored, as shown in FIG. 2 b.

Furthermore, in a program period (PGM2), a program voltage (one ofVpgm(J+1) to VpgmK) (K is an integer) is applied to the word line duringa time (P2) and a verify voltage (Vver2) is applied to the word lineduring a time (R2). The verify voltage (Vver2) is lower than a thresholdvoltage of a MLC in which data “00” are stored, as shown in FIG. 2 b.

In a program period (PGM3), a program voltage (one of Vpgm(K+1) toVpgmL) (L is an integer) is applied to the word line during a time (P3)and a verify voltage (Vver3) is applied to the word line during a time(R3). The verify voltage (Vver3) is lower than a threshold voltage of aMLC in which data “01” are stored, as shown in FIG. 2 b.

In this case, the relationship between the program voltages (Vpgm1 toVpgmL) can be expressed into the following equation.Vpgm2=Vpgm1+Vs,. . .. . .. . .VpgmJ=Vpgm(J−1)+Vs,Vpgm(J+1)=VpgmJ+Vs,. . .. . .. . .VpgmK=Vpgm(K−1)+Vs,Vpgm(K+1)=VpgmK+Vs,. . .. . .. . .VpgmL=Vpgm(L−1)+Vs,(Vs is a step voltage, J, K, L is an integer)

As can be seen from the above equation, in the program process accordingto the ISPP method in the related art, to program MLCs having athreshold voltage lower than a verify voltage (one of Vver1 to Vver3), aprogram voltage (or a program pulse) that gradually rises by the stepvoltage (Vs) is repeatedly applied to the word line.

As a result, the greater the number of cells having a low program speed(i.e., slow cells), the greater the number in which the program voltageis applied to the word line (i.e., a program cycle number). If thenumber of the program cycles increased as described above, a problemarises because an overall program time is increased. This problem alsooccurs even in a flash memory device having SLCs.

SUMMARY OF THE INVENTION

An advantage of the present invention is that it provides an erasemethod of a flash memory device, in which it can reduce the failoccurrence ratio when erasing MLCs, improve the threshold voltagedistribution of MLCs and reduce an overall program time in a subsequentprogram operation by performing pre-programming so that a voltage rangein which threshold voltages of MLCs are distributed can be reduced.

Another advantage of the present invention is that it provides a programmethod of a flash memory device, in which only MLCs or SLCs having aslow program speed are selected and programmed wherein the ISPP methodis performed for program, so that an overall program time can bereduced.

Further another advantage of the present invention is that it provides aprogram method of a flash memory device, in which step voltages (i.e.,an increment width of a program voltage) before and after thresholdvoltages of MLCs become a set verify voltage are set to be differentfrom each other in the ISPP method for program, so that an overallprogram time can be reduced.

According to an aspect of the present invention, there is provided anerase method of a flash memory device including a plurality of MLCs thatshare word lines and bit lines, including the steps of pre-programmingsome of the plurality of MLCs so that a range in which thresholdvoltages of the plurality of MLCs are distributed is reduced, erasingthe plurality of MLCs, and verifying whether the plurality of MLCs hasbeen normally erased.

According to another aspect of the present invention, there is provideda program method of a flash memory device including a plurality ofmemory cells that share word lines and bit lines, including the steps ofselecting one of the word lines; programming memory cells connected tothe selected word line, of the plurality of memory cells, by applying astart program voltage to the selected word line; selecting memory cellsrespectively having threshold voltages lower than a predeterminedvoltage, of the memory cells connected to the selected word line;programming the selected memory cells by applying a pre-program voltageto the selected word line; prohibiting program into the remaining memorycells other than the selected memory cells when the selected memorycells are programmed; and additionally programming the memory cellsconnected to the selected word line, while supplying a program voltagethat gradually rises from the start program voltage at the ratio of thestep voltage to the selected word line.

According to further another aspect of the present invention, there isprovided a program method of a flash memory device including a pluralityof memory cells that share word lines and bit lines, including the stepsof selecting one of the word lines; programming memory cells connectedto the selected word line by applying a start program voltage thatgradually rises at the ratio of a step voltage to the selected word linein each of first to P^(th) (P is an integer) program cycles; selectingmemory cells respectively having threshold voltages lower than apredetermined voltage, of the memory cells connected to the selectedword line; programming the selected memory cells by applying apre-program voltage to the selected word line; prohibiting program intothe remaining memory cells other than the selected memory cells when theselected memory cells are programmed; and additionally programming thememory cells connected to the selected word line, while supplying aprogram voltage that gradually rises from the start program voltage thathas finally rises in the step of programming the memory cells at theratio of the step voltage to the selected word line.

According to still another aspect of the present invention, there isprovided a program method of a flash memory device including a pluralityof MLCs that share word lines and bit lines, including the steps ofselecting one of the word lines; first programming the MLCs connected tothe selected word line by applying a first program voltage thatgradually rises from a start program voltage at the ratio of a firststep voltage to the selected word line; and first programming the MLCsconnected to the selected word line by applying a second program voltagethat gradually rises from the first program voltage, which has finallyrisen in the first program step, at the ratio of a second step voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view showing variation in the threshold voltage of MLCsdepending on an erase method of a flash memory device having MLCs in therelated art;

FIG. 2 a is a view showing variation in a voltage applied to a word linein a program method of a flash memory device having MLCs in the relatedart;

FIG. 2 b is a view showing the relationship between verify voltages andthreshold voltages of MLCs shown in FIG. 2 a;

FIG. 3 is a circuit diagram of a page buffer and a memory cell blockillustrating the erase and program methods according to an embodiment ofthe present invention;

FIG. 4 is a flowchart illustrating the erase method according to anembodiment of the present invention;

FIG. 5 is a detailed flowchart illustrating the process (401) shown inFIG. 4;

FIG. 6 is a detailed flowchart illustrating the process (420) shown inFIG. 5;

FIG. 7 is a detailed flowchart illustrating the process (421 shown inFIG. 6;

FIG. 8 is a detailed flowchart illustrating an example of the process(420) shown in FIG. 5;

FIGS. 9 and 10 are graphs showing threshold voltage distribution ofMLCs, which are varied depending on the erase method according to anembodiment of the present invention;

FIG. 11 is a detailed flowchart illustrating the process (403) shown inFIG. 4;

FIG. 12 is a flowchart illustrating an erase method according to anotherembodiment of the present invention;

FIG. 13 is a detailed flowchart illustrating the process (501) shown inFIG. 12;

FIG. 14 is a detailed flowchart illustrating the process (520) shown inFIG. 13;

FIG. 15 is a detailed flowchart illustrating the process (503) shown inFIG. 12;

FIG. 16 is a graph showing threshold voltage distribution of MLCs, whichare varied depending on the erase method according to another embodimentof the present invention;

FIG. 17 is a flowchart illustrating a program method according to afirst embodiment of the present invention;

FIG. 18 is a detailed flowchart illustrating the process (603) shown inFIG. 17;

FIG. 19 is a detailed flowchart illustrating the process (606) shown inFIG. 19;

FIG. 20 is a detailed flowchart illustrating the process (620) shown inFIG. 19;

FIG. 21 is a detailed flowchart illustrating the process (630) shown inFIG. 19;

FIG. 22 is a detailed flowchart illustrating the process (640) shown inFIG. 19;

FIG. 23 is a view showing variation in a voltage applied to a word linein a program method according to a first embodiment of the presentinvention;

FIG. 24 is a flowchart illustrating a program method according to asecond embodiment of the present invention;

FIG. 25 is a view showing variation in a voltage applied to a word linein a program method according to a second embodiment of the presentinvention;

FIG. 26 is a view showing the relationship between the verify voltagesand threshold voltage of MLCs shown in FIGS. 23 and 25;

FIG. 27 is a flowchart illustrating a program method according to athird embodiment of the present invention;

FIG. 28 is a view showing variation in a voltage applied to a word linein a program method according to a third embodiment of the presentinvention;

FIG. 29 is a flowchart illustrating a program method according to afourth embodiment of the present invention;

FIG. 30 is a view showing variation in a voltage applied to a word linein a program method according to a fourth embodiment of the presentinvention;

FIG. 31 is a view showing the relationship between the verify voltagesand threshold voltage of MLCs shown in FIGS. 28 and 30;

FIG. 32 is a flowchart illustrating a program method according to afifth embodiment of the present invention;

FIG. 33 is a detailed flowchart illustrating the process (820) shown inFIG. 31;

FIG. 34 is a detailed flowchart illustrating the process (830) shown inFIG. 31;

FIG. 35 is a detailed flowchart illustrating the process (840) shown inFIG. 31; and

FIG. 36 is a view showing variation in a voltage applied to a word linein a program method according to a fifth embodiment of the presentinvention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will now be described in connection with preferredembodiments with reference to the accompanying drawings.

FIG. 3 is a circuit diagram of a page buffer and a memory cell blockillustrating the erase and program methods according to an embodiment ofthe present invention.

Referring to FIG. 3, a memory cell block 100 includes memory cells(i.e., MLCs or SLCs) Me11 to MeJK and Mo11 to MoJK (J, K is an integer),drain select transistors DST and source select transistors SST. The MLCsMe11 to MeJK and Mo11 to MoJK have gates connected to word lines WL1 toWLJ, respectively. The MLCs Me11 to Me1K and Mo11 to Mo1K are connectedto the drain select transistors DST, respectively. The MLCs MeJ1 to MeJKand MoJ1 to MoJK are connected to the source select transistors SST,respectively. The drain select transistors DST are connected to bitlines BLe1 to BLoK, respectively, one by one. The source selecttransistors SST are connected to a common source line CSL.

Each of page buffer circuits PB1 to PBK (K is an integer) is connectedto a pair of the bit lines BLe1 to BloK. For example, the page buffercircuit PB1 can be connected to the bit lines BLe1, BLo1. Theconstruction and operation of the page buffer circuits PB1 to PBK arethe same. Therefore, only the page buffer circuit PB1 will be describedas an example.

The page buffer circuit PB1 includes a bit line select circuit 210, anupper bit register 220, a lower bit register 230, a data input circuit240, a first verify circuit 250, a second verify circuit 260, a datapass circuit 270, a data output circuit 280 and a precharge circuit 290.

The bit line select circuit 210 selects one of the bit lines BLe1, BLo1in response to bit line select signals (BSLe, BSLo) and dischargesignals (DISCHe, DISCHo), and connects the selected bit line BLe1 orBLo1 to a sensing node SO. The bit line select circuit 210 includes NMOStransistors 211 to 214.

The upper bit register 220 includes a sensing circuit 221, a latchcircuit 222 and a latch reset circuit 223.

The sensing circuit 221 includes NMOS transistors 224, 225, and itsenses a voltage of the sensing node SO in response to a read controlsignal (MREAD) and generates upper sensing data (SAb) to a node Q1. Thelatch circuit 222 includes a latch 226 and an inverter 227. The latch226 latches the upper sensing data (SAb) output to the node Q1 andoutputs inverted upper sensing data (SA) to a node Q2. Furthermore, thelatch 226 latches input data (D1B or D2) and outputs inverted input data(D1 or D2B) to a node Q2 or Q1. The inverter 227 inverts the uppersensing data (SAb) or the input data (D1B or D2B), which are receivedfrom the latch 226 through the node Q1. The latch reset circuit 223initializes the latch circuit 222 in response to a reset control signal(MRST).

The lower bit register 230 includes a sensing circuit 231 and a latchcircuit 232.

The sensing circuit 231 includes NMOS transistors 233 to 235. Thesensing circuit 231 senses a voltage of the sensing node SO in responseto a read control signal (LREAD1 or LREAD2) and generates lower sensingdata (SL1 or SL2 b) to a node Q4 or Q3.

The latch circuit 232 includes a latch 236 and an inverter 237. Thelatch 236 latches the lower sensing data (SL1 or SL2 b) and outputsinverted lower sensing data (SL1 b or SL2) to the node Q3 or Q4. Theinverter 237 receives the inverted lower sensing data (SL1 b) or thelower sensing data (SL2 b) from the latch 226 through the node Q3 andinverts the received data (SL1 b or SL2 b).

The data input circuit 240 includes NMOS transistors 241, 242. The datainput circuit 240 outputs input data (D1 b or D2), which are receivedthrough a data I/O node Y1, to the latch 226 of the upper bit register220 through the node Q1 or Q2, in response to data input signals (DI1,nDI1).

The first verify circuit 250 is connected to the node Q2 and outputsverify data (MVD1) to a data verify line MVL1 in response to one of theinverted upper sensing data (SA), the inverted input data (D1) and theinput data (D2), which are received from the latch 226. The first verifycircuit 250 can be implemented using a PMOS transistor.

In this case, when received data (one of SA, D1 and D2) are logic “0”,the PMOS transistor 250 supplies an internal voltage (VCC) to the dataverify line MVL1 and outputs the verify data (MVD1) as logic “1”. To thecontrary, when the received data (one of SM, D1 and D2) are logic “1”,the PMOS transistor 250 does not apply the internal voltage (VCC) to thedata verify line MVL1. Therefore, the verify data (MVD1) become logic“0”. The data verify line MVL1 is initially set to a ground voltagelevel.

The second verify circuit 260 is connected to a node Q4 and outputs theverify data (LVD1) to the data verify line LVL1 in response to theinverted lower sensing data (SL2) or the lower sensing data (SL1)received from the latch 236. The second verify circuit 260 can beexecuted as a PMOS transistor.

In this case, when the lower sensing data (SL1) of logic “0” arereceived, the PMOS transistor 260 applies the internal voltage (VCC) tothe data verify line LVL1 and outputs the verify data (LVD1) as logic“1”. To the contrary, when the inverted lower sensing data (SL2) oflogic “1” are received, the PMOS transistor 260 does not apply theinternal voltage (VCC) to the data verify line LVL1. Therefore, theverify data (LVD1) become logic “0”. The data verify line LVL1 isinitially set to the ground voltage level.

The data pass circuit 270 includes NMOS transistors 271, 272. The NMOStransistor 271 outputs the inverted input data (D1) or the input data(D2), which is received from the inverter 227 of the upper bit register220, to the sensing node SO in response to a transmission control signal(MPGM). The NMOS transistor 272 outputs the inverted lower sensing data(SL2), which are received from the inverter 237 of the lower bitregister 230, to the sensing node SO in response to a transmissioncontrol signal (SPGM).

The data output circuit 280 includes NMOS transistors 281, 282. The NMOStransistor 281 outputs the inverted upper sensing data (SA) to the dataI/O node Y1 in response to a data output signal (MBDO). The NMOStransistor 282 outputs the inverted lower sensing data (SL2) to the dataI/O node Y1 in response to a data output signal (SBDO).

The precharge circuit 290 precharges the sensing node SO to the internalvoltage (VCC) in response to a precharge control signal (PRECHb).

The erase method according to an embodiment of the present inventionwill be described in detail below with reference to FIGS. 4 to 11. FIG.4 is a flowchart (400) illustrating the erase method according to anembodiment of the present invention.

Some of the MLCs Me11 to MeJK and Mo11 to MoJK are pre-programmed sothat the range in which threshold voltages of the MLCs Me11 to MeJK andMo11 to MoJK are distributed is reduced (401). Thereafter, the MLCs Me11to MeJK and Mo11 to MoJK are erased (402). The erase process (402) canbe understood by those skilled in the art. Description thereof will beomitted. It is verified whether the MLCs Me11 to MeJK and Mo11 to MoJKhave been normally erased (403).

FIG. 5 is a detailed flowchart illustrating the process (401) shown inFIG. 4.

Referring to FIG. 5, one (e.g., WL1) of the word lines WL1 to WLJ isselected (410). A program voltage (not shown) is then applied to theselected word line WL1. The page buffers PB1 to PBK input data forprogram to some of the bit lines BLe1 to BLeK and BLo1 to BloK and inputdata for program prohibition to the remaining bit lines.

As a result, some of the MLCs Me11 to Me1K or Mo11 to Mo1K connected tothe selected word line WL1 is programmed (420). The step (420) will bedescribed I more detail with reference to FIGS. 6 to 10.

As can be seen from graphs (T1 to T4) in FIG. 9( a) and FIG. 9( b),threshold voltages of the MLCs Me11 to Me1K or Mo11 to Mo1K are includedin first to fourth voltage ranges (R1 to R4), respectively.

In this case, the highest voltage (VM1) of the first voltage range (R1)(i.e., a threshold voltage range of MLCs in which data “11” are stored)is lower than the lowest voltage (VL2) of the second voltage range (R2)(i.e., a threshold voltage range of MLCs in which data “10” are stored).The highest voltage (VM2) of the second voltage range (R2) is lower thanthe lowest voltage (VL3) of the third voltage range (R3) (i.e., athreshold voltage range of MLCs in which data “00” are stored).Furthermore, the highest voltage (VM3) of the third voltage range (R3)is lower than the lowest voltage (VL4) of the fourth voltage range (R4)(i.e., a threshold voltage range of MLCs in which data “01” are stored).

Meanwhile, in the step (420), only MLCs having the threshold voltagesincluded in the first voltage range (R1) can be selected and programmed.In more detail, as indicated by a dotted arrow of FIG. 9( a), the MLCscan be programmed so that the threshold voltages are moved from thefirst voltage range (R1) to the second voltage range (R2) (i.e., lowerbit data are programmed into the MLCs).

Alternately, as indicated by a dotted arrow of FIG. 9( b), the MLCs canbe programmed so that the threshold voltages are moved from the firstvoltage range (R1) to the fourth voltage range (R4) (i.e., upper bitdata are programmed into the MLCs).

Referring to FIG. 6, MLCs respectively having threshold voltagesincluded in the first voltage range (R1) are selected from the MLCs Me11to Me1K or Mo11 to Mo1K connected to the selected word line WL1 (421 a).The step (421 a) will be described in more detail below with referenceto FIG. 7.

The lower bit register 230 of each of the page buffers PB1 to PBK sensesa voltage (e.g., VCC) of the sensing node SO in response to the readcontrol signal (LREAD1) and stores the lower sensing data (SL1)depending on the sensed result, so that it is initialized.

Thereafter, as the selected word line WL1 is supplied with the verifyvoltage (refer to PV1 in FIG. 9), data (not shown) are read from theMLCs Me11 to Me1K or Mo11 to Mo1K (461). The page buffers PB1 to PBKgenerate the verify data (LVD1 to LVDK) based on the read data (462).This will be described in more detail.

The lower bit register 230 of each of the page buffers PB1 to PBK sensesa voltage of the sensing node SO, which is decided by each of the readdata, in response to the read control signal (LREAD2), and stores thelower sensing data (SL2 b) depending on the sensed result.

For example, when the read data are logic “1” (i.e., when a thresholdvoltage of a corresponding MLC is higher than the verify voltage (PV1)),the lower bit register 230 stores the lower sensing data (SL2 b) oflogic “0” (i.e., the inverted lower sensing data (SL2) of logic “1”).

On the other hand, when the read data are logic “0” (i.e., when athreshold voltage of a corresponding MLC is lower than the verifyvoltage (PV1)), the lower bit register 230 maintains the storage state(i.e., an initialization state) of the lower sensing data (SL1) of logic“0”. The lower sensing data (SL1) of logic “0”, which are stored in thelower bit register 230, are used as the program data in a subsequentprogram step (422 a).

The second verify circuit 260 of each of the page buffers PB1 to PBKgenerates verify data (one of LVD1 to LVDK) in response to the lowersensing data (SL1) or the inverted lower sensing data (SL2) receivedfrom the lower bit register 230 (462). For example, the second verifycircuit 260 can generate verify data (one of LVD1 to LVDK) of logic “1”in response to the lower sensing data (SL1). The second verify circuit260 can generate verify data (one of LVD1 to LVDK) of logic “0” inresponse to the lower sensing data (SL2).

Thereafter, a data compare circuit (not shown) determines whether eachof the verify data (LVD1 to LVDK) is logic “1” (463). The data comparecircuit determines that MLCs (e.g., Me11 to Me16 or Mo11 to Mo16)corresponding to verify data (e.g., LVD1 to LVD6) of logic “1” havetheir threshold voltages included in the first voltage range (R1) (464).Furthermore, the data compare circuit determines that MLCs (e.g., Me17to Me1K or Mo17 to Mo1K) corresponding to verify data (e.g., LVD7 toLVDK), which are not logic “1”, have their threshold voltages notincluded in the first voltage range (R1) (465).

As a result, the MLCs Me11 to Me16 or Mo11 to Mo16 respectively havingthe threshold voltages included in the first voltage range (R1), of theMLCs Me11 to Me1K or Mo11 to Mo1K, can be filtered.

Referring back to FIG. 6, the selected MLCs Me11 to Me16 or Mo11 to Mo16are programmed so that the threshold voltages of the selected MLCs Me11to Me16 or Mo11 to Mo16 are moved from the first voltage range (R1) tothe second voltage range (R2) or from the first voltage range (R1) tothe fourth voltage range (R4) (422 a).

At this time, the word line WL1 is supplied with a program voltage. Eachof the page buffers PB1 to PB6 outputs the lower sensing data (SL1) oflogic “0”, which are stored in the lower bit register 230 in the step(462), to the bit lines BLe11 to BLe16 or BLo11 to BLo16, respectively,as the program data through the sensing node SO in response to thetransmission control signal (SPGM).

At this time, a time taken to program the MLCs so that the thresholdvoltages of the selected MLCs Me11 to Me16 or Mo11 to Mo16 are movedfrom the first voltage range (R1) to the second voltage range (R2) canbe set to be shorter than a time taken to program the MLCs so that thethreshold voltages of the selected MLCs Me11 to Me16 or Mo11 to Mo16 aremoved from the first voltage range (R1) to the fourth voltage range(R4).

Meanwhile, when the selected MLCs Me11 to Me16 or Mo11 to Mo16 areprogrammed, program into the MLCs Me17 to Me1K or Mo17 to Mo1K that arenot selected are prohibited (423 a).

In more detail, each of the page buffers PB7 to PBK outputs the invertedlower sensing data (SL2) of logic “1”, which are stored in the lower bitregister 230 in the step (462), to bit lines BLe17 to BLe1K or BLo17 toBLo1K, respectively, as the program data through the sensing node SO inresponse to the transmission control signal (SPGM).

Referring back to FIG. 5, it is determined whether some of the MLCs(i.e., the selected MLCs Me11 to Me16 or Mo11 to Mo16) have beenprogrammed (430). Though not shown in FIG. 5 in detail, the step (430)is the same as the step (421 a), which has been described with referenceto FIG. 7, except for several points.

The steps (430, 421 a) differ from each other in that one of the verifyvoltages (PV1, PV3) is selectively supplied to the word line WL1 in thestep (430), and when both the verify data (LVD1 to LVD6 or MVD1 to MVD6)are logic “0”, it is determined that the selected MLCs Me11 to Me16 orMo11 to Mo16 are all programmed.

For example, in the case where the selected MLCs Me11 to Me16 or Mo11 toMo16 are programmed so that the threshold voltages of the selected MLCsMe11 to Me16 or Mo11 to Mo16 are moved from the first voltage range (R1)to the second voltage range (R2) in the step (420), the verify voltage(PV1) is applied to the word line WL1 in the step (430).

Furthermore, in the case where the selected MLCs Me11 to Me16 or Mo11 toMo16 are programmed so that the threshold voltages of the selected MLCsMe11 to Me16 or Mo11 to Mo16 are moved from the first voltage range (R1)to the fourth voltage range (R4), the verify voltage (PV3) is applied tothe word line WL1 in the step (430).

Thereafter, the steps (420, 430) are repeatedly performed until theselected MLCs Me11 to Me16 or Mo11 to Mo16 are programmed.

Thereafter, it is determined whether the selected word line is a lastword line (440). The steps (410 to 440) are repeatedly performed untilthe selected word line becomes the last word line.

The reason why MLCs connected to the entire word lines are programmed inthe pre-program process (401) is that the erase operation of the flashmemory device is performed on a memory-cell-block basis. Therefore, thethreshold voltages of the MLCs Me11 to Me1K or Mo11 to Mo1K are includedin the second to fourth voltage ranges (R2 to R4), respectively, bymeans of the process (401), as indicated in FIG. 9( c).

As a result, the entire distribution range (WD2) (refer to FIG. 9( c))of the threshold voltages of the MLCs Me11 to Me1K or Mo11 to Mo1K afterthe MLCs are pre-programmed can become narrower than the entiredistribution range (WD1) (refer to FIG. 9( a) and FIG. 9( b)) of thethreshold voltages of the MLCs Me11 to Me1K or Mo11 to Mo1K before theMLCs are pre-programmed.

If the entire distribution range of the threshold voltages of the MLCsbecomes narrow as described above, the ratio in which fail is generatedin the erase process (402) can be reduced because the threshold voltagesof the MLCs exist within a voltage range lower than the erase verifyvoltage (VE) after the erase process (402) as shown in the graphs (T2 toT4) of FIG. 9( d).

Furthermore, in the case where the entire distribution range ofthreshold voltages of MLCs is narrowed, an overall program time can beshortened in a subsequent program process.

Alternately, the step (420), MLCs can be firstly programmed (i.e., afterlower bit data are programmed into the MLCs) so that the thresholdvoltages of the MLCs are moved from the first voltage range (R1) to thesecond voltage range (R2) and can be then secondly programmed (i.e.,upper bit data are programmed into the MLCs) so that the thresholdvoltages of the MLCs are moved from the second voltage range (R2) to thethird voltage range (R3), as shown in graphs (T11 to T14) of FIG. 10(a). This will be described in more detail below with reference to FIG.8.

FIG. 8 is a detailed flowchart illustrating an example of the process(420) shown in FIG. 5.

MLCs (e.g., Me11 to Me16 or Mo11 to Mo16), each having thresholdvoltages included in the first voltage range (R1), are selected from theMLCs Me11 to Me1K or Mo11 to Mo1K connected to a selected word line(e.g., WL1) (421 b).

Thereafter, the selected MLCs Me11 to Me16 or Mo11 to Mo16 areprogrammed so that threshold voltages of the selected MLCs Me11 to Me16or Mo11 to Mo16 are moved from the first voltage range (R1) to thesecond voltage range (R2) (422 b).

When the selected MLCs Me11 to Me16 or Mo11 to Mo16 are programmed,program into the MLCs Me17 to Me1K or Mo17 to Mo1K that have not beenselected is prohibited (423 b).

The steps (421 b to 423 b) are substantially the same as the steps (421a to 423 a), which have been described with reference to FIG. 6.Detailed description thereof will be omitted.

Thereafter, MLCs (e.g., Me11 to Me19 or Mo11 to Mo19), each havingthreshold voltages included in the second voltage range (R2), areadditionally selected from the MLCs Me11 to Me1K or Mo11 to Mo1K (424b). The step (424 b) is the same as the step (421 a), which has beendescribed with reference to FIG. 7, except for several points.

That is, the step 424 a is also different from the step 421 a in thatthe verify voltage (refer to PV2 in FIG. 10) is applied to the word lineWL1. The step 424 a is also different from the step 421 a in that theMLCs Me11 to Me19 or Mo11 to Mo19, which correspond to verify data(e.g., LVD1 to LVD9) having logic “1”, (i.e., threshold voltages of theMLCs Me11 to Me19 or Mo11 to Mo19 are included in the second voltagerange (R2)), are filtered.

The additionally selected MLCs Me11 to Me19 or Mo11 to Mo19 areprogrammed so that the threshold voltages of the additionally selectedMLCs Me11 to Me19 or Mo11 to Mo19 are moved from the second voltagerange (R2) to the third voltage range (R3) (425 b).

When the additionally selected MLCs Me11 to Me19 or Mo11 to Mo19 areprogrammed, program into the MLCs Me110 to Me1K or Mo110 to Mo1K thathave not been selected is prohibited (426 b). The operation of the pagebuffers PB1 to PBK in the steps (425 b, 426 b) is similar to that of thepage buffers PB1 to PBK in the steps (422 a, 423 a).

As described above, the threshold voltages of the MLCs Me11 to Me1K orMo11 to Mo1K are included in the third and fourth voltage ranges (R3,R4), respectively, by means of the step (420), as shown in FIG. 10( b).As a result, the entire distribution range (WD3) (refer to FIG. 10( b))of the threshold voltages of the MLCs Me11 to Me1K or Mo11 to Mo1K afterthe MLCs are pre-programmed can become narrower than the entiredistribution range (WD11) (refer to FIG. 10( a)) of the thresholdvoltages of the MLCs Me11 to Me1K or Mo11 to Mo1K before the MLCs arepre-programmed.

FIG. 11 is a detailed flowchart illustrating the process (403) shown inFIG. 4.

Referring to FIG. 11, the upper bit register 220 and the lower bitregister 230 of each of the page buffers PB1 to PBK are initialized inresponse to the read control signal (MREAD) and the read control signal(LREAD2), respectively (471). As a result, the latch circuit 222 outputsupper sensing data (SA) of logic “1” to the node Q2 and the latchcircuit 232 outputs lower sensing data (SL2) of logic “1” to the nodeQ4. The operation of the page buffers PB1 to PBK in the step (471) canbe easily understood by those skilled in the art. Description thereofwill be omitted in order to avoid redundancy.

Thereafter, as the erase verify voltage (VE) is applied to the selectedword line WL1, data (not shown) are read from the MLCs Me11 to Me1K orMo11 to Mo1K connected to a selected word line WL1 (472).

The lower bit register 230 of each of the page buffers PB1 to PBK sensesa voltage of the sensing node SO, which is decided by each of the readdata, in response to the read control signal (LREAD1), and stores thelower sensing data (SL1) depending on the sensing result (473).

For example, when the read data are logic “1” (i.e., a threshold voltageof a corresponding MLC is higher than the erase verify voltage (VE)),the lower bit register 230 can store the lower sensing data (SL1) oflogic “0”. On the other hand, when the read data are logic “0” (i.e., athreshold voltage of a corresponding MLC is lower than the erase verifyvoltage (VE)), the lower bit register 230 can maintain the storage stateof the inverted lower sensing data (SL2) of logic “1” (i.e., aninitialization state).

The data pass circuit 270 of each of the page buffers PB1, PB2, whichare connected to repaired MLCs (i.e., fail cells) (e.g., Me11 to Me12 orMo11 to Mo12) of MLCs Me11 to Me1K or Mo11 to Mo1K connected to theselected word line WL1, transfers the initial data (SA) stored in theupper bit register 220 to the lower bit register 230 in response to thetransmission control signal (MPGM) (474).

The lower bit register 230 senses a voltage of the sensing node SO,which is decided by the initial data (SA), in response to the readcontrol signal (LREAD2). The reason why the step (474) is executed isthat the verify result on the fail cells Me11 to Me12 or Mo11 to Mo12 isto be determined as a pass unconditionally although the fail cells Me11to Me12 or Mo11 to Mo12 are not erased in the step (402) because thefail cells Me11 to Me12 or Mo11 to Mo12 have already been repaired byrepair memory cells.

The second verify circuit 260 of each of the page buffers PB1 to PBKgenerates the verify data (LVD1) in response to the inverted lowersensing data (SL2), which is generated based on the lower sensing data(SL1) stored in the lower bit register 230 or the initial data (SA)(475).

For example, the second verify circuit 260 can generate verify data (oneof LVD1 to LVDK) of logic “1” in response to the lower sensing data(SL1) and the second verify circuit 260 can generate verify data (one ofLVD1 to LVDK) of logic “0” in response to the inverted lower sensingdata (SL2).

Thereafter, a data compare circuit (not shown) determines whether atleast one of the verify data (LVD1 to LVDK) output from the page buffersPB1 to PBK is logic “1” (476).

If it is determined that at least one of the verify data (LVD1 to LVDK)is logic “1”, the erase of the MLCs Me11 to Me1K or Mo11 to Mo1K isdetermined as a fail (478). Furthermore, when the verify data (LVD1 toLVDK) are all logic “0”, it is determined that the erase of the MLCsMe11 to Me1K or Mo11 to Mo1K is a pass (477).

FIG. 12 is a flowchart illustrating an erase method (500) according toanother embodiment of the present invention.

Some of the MLCs Me11 to MeJK, Mo11 to MoJK are first pre-programmed sothat the threshold voltages of the MLCs Me11 to MeJK, Mo11 to MoJK arereduced (501). The MLCs Me11 to MeJK, Mo11 to MoJK are then erased(502). The MLCs Me11 to MeJK, Mo11 to MoJK are post-programmed so thatthe threshold voltages of the MLCs Me11 to MeJK, Mo11 to MoJK andover-programmed MLCs are included in a predetermined voltage range(503). It is verified whether the MLCs Me11 to MeJK, Mo11 to MoJK havebeen normally erased (504).

The method (500) is substantially the same as the method (400), whichhas been described with reference to FIGS. 4 to 11, except for onepoint. The method (500) is different from the method (400) in that apost program process (503) is further included between the erase process(502) and the verify process (504). Therefore, in the presentembodiment, only the post program process (503) will be described.

FIG. 13 is a detailed flowchart illustrating the process (501) shown inFIG. 12.

Referring to FIG. 13, one of (e.g., WL1) of the word lines WL1 to WLJ isselected (510). Thereafter, the program voltage is applied to theselected word line WL1. The page buffers PB1 to PBK input data forprogram to some of the bit lines BLe1 to BLeK, BLo1 to BLoK and inputsdata for program prohibition to the remaining bit lines. As a result,some of the MLCs Me11 to Me1K or Mo11 to Mo1K connected to the selectedword line WL1 are programmed (520).

It is determined whether some of the MLCs have been programmed (530).Thereafter, the steps (520, 530) are repeatedly performed until some ofthe MLCs Me11 to Me1K or Mo11 to Mo1K are programmed.

It is then determined whether the selected word line is the last wordline (540). The steps (510 to 540) are repeatedly performed until theselected word line is the last word line. The process (501) is the sameas the step (401), which has been described with reference to FIG. 5.The steps (510 to 540) will not be described for simplicity.

FIG. 14 is a detailed flowchart illustrating the process (520) shown inFIG. 13.

MLCs (e.g., Me11 to Me16 or Mo11 to Mo16), each having thresholdvoltages included in a first voltage range (refer to R1 in FIG. 16( a)),are selected from MLCs Me11 to Me1K or Mo11 to Mo1K connected to aselected word line (e.g., WL1) (521).

Thereafter, the selected MLCs Me11 to Me16 or Mo11 to Mo16 areprogrammed so that the threshold voltages of the selected MLCs Me11 toMe16 or Mo11 to Mo16 are moved from the first voltage range (R1) to afourth voltage range (refer to R4 in FIG. 16( a) (522). When theselected MLCs Me11 to Me16 or Mo11 to Mo16 are programmed, program intonon-selected MLCs Me17 to Me1K or Mo17 to Mo1K is prohibited (523).

The steps (521 to 523) are substantially the same as the steps (421 a to423 a), which have been described with reference to FIG. 6. Detaileddescription thereof will be omitted.

Thereafter, MLCs (e.g., Me17 to Me112 or Mo17 to Mo112), each havingthreshold voltages included in a second voltage range (R2), areadditionally selected from the MLCs Me11 to Me1K or Mo11 to Mo1K (524).The additionally selected MLCs Me17 to Me112 or Mo17 to Mo112 areprogrammed so that the threshold voltages of the additionally selectedMLCs Me17 to Me112 or Mo17 to Mo112 are moved from the second voltagerange (R2) to a third voltage range (refer to R3 in FIG. 16( a)) (525).

When the additionally selected MLCs Me17 to Me112 or Mo17 to Mo112 areprogrammed, program into non-selected MLCs Me113 to Me1K or Mo113 toMo1K is prohibited (526). The steps (524 to 526) are substantially thesame as the steps (424 b to 426 b), which have been described withreference to FIG. 8. Description thereof will be omitted.

As described above, the threshold voltages of the MLCs Me11 to Me1K toMo11 to Mo1K are included in the third and fourth voltage ranges (R3,R4), respectively, by means of the step (520), as shown in FIG. 16( b).As a result, the entire distribution range (WD3) (refer to FIG. 16( b))of the threshold voltages of the MLCs Me11 to Me1K or Mo11 to Mo1K afterthe MLCs are pre-programmed can become narrower than the entiredistribution range (WD11) (refer to FIG. 16( a)) of the thresholdvoltages of the MLCs Me11 to Me1K or Mo11 to Mo1K before the MLCs arepre-programmed.

FIG. 15 is a detailed flowchart illustrating the process (503) shown inFIG. 12.

Referring to FIG. 15, one (e.g., WL1) of the word lines WL1 to WLJ isselected (561). As a program voltage (not shown) is applied to theselected word line WL1, MLCs Me11 to Me1K or Mo11 to Mo1K connected tothe selected word line WL1 are programmed (562).

Thereafter, the upper bit register 220 and the lower bit register 230 ofeach of the page buffers PB1 to PBK are initialized in response to theread control signal (MREAD) and the read control signal (LREAD2) (563).As a result, the latch circuit 222 outputs the upper sensing data (SA)of logic “1” to the node Q2 and the latch circuit 232 outputs the lowersensing data (SL2) of logic “1” to the node Q4.

Thereafter, as an erase verify voltage (refer to VF in FIG. 16( d))(e.g., 0V), which is lower than the erase verify voltage (VE), isapplied to the selected word line WL1, data (not shown) are read fromthe MLCs Me11 to Me1K or Mo11 to Mo1K connected to the selected wordline WL1 (564).

The lower bit register 230 of each of the page buffers PB1 to PBK sensesa voltage of the sensing node SO, which is decided by each of the readdata, in response to the read control signal (LREAD1), and stores thelower sensing data (SL1) depending on the sensing result (565).

For example, when the read data are logic “1” (i.e., a threshold voltageof a corresponding MLC is higher than the erase verify voltage (VF)),the lower bit register 230 can store the lower sensing data (SL1) oflogic “0”. On the other hand, when the read data are logic “0” (i.e., athreshold voltage of a corresponding MLC is lower than the erase verifyvoltage (VF)), the lower bit register 230 can maintain the storage stateof the inverted lower sensing data (SL2) of logic “1” (i.e., aninitialization state).

The data pass circuit 270 of each of the page buffers PB1, PB2 connectedto repaired MLCs (i.e., fail cells) (e.g., Me11 to Me12 or Mo11 toMo12), of the MLCs Me11 to Me1K or Mo11 to Mo1K connected to theselected word line WL1, transfers the initial data (SA) stored in theupper bit register 220 to the lower bit register 230 in response to thetransmission control signal (MPGM) (566).

The lower bit register 230 senses a voltage of the sensing node SO,which is decided according to the initial data (SA), in response to theread control signal (LREAD2). The second verify circuit 260 of each ofthe page buffers PB1 to PBK generates the verify data (LVD1) in responseto the inverted lower sensing data (SL2), which is generated on thebasis of the lower sensing data (SL1) or the initial data (SA) stored inthe lower bit register 230 (567).

For example, the second verify circuit 260 can generate verify data (oneof LVD1 to LVDK) of logic “1” in response to the lower sensing data(SL1) and the second verify circuit 260 can generate verify data (one ofLVD1 to LVDK) of logic “0” in response to the inverted lower sensingdata (SL2).

A data compare circuit (not shown) determines whether at least one ofthe verify data (LVD1 to LVDK) output from the page buffers PB1 to PBKis logic “1” (568).

If it is determined that the verify data (LVD1 to LVDK) are all logic“0”, the program voltage applied to the word line WL1 is increased by astep voltage (not shown) (569) and the steps (562 to 569) are repeatedlyperformed. Meanwhile, of it is determined that at least one of theverify data (LVD1 to LVDK) is logic “1”, it is determined whether theselected word line is a last word line (570).

The steps (561 to 570) are repeatedly executed until the selected wordline becomes the last word line. If it is determined that at least oneof the verify data (LVD1 to LVDK) is logic “1” in the step (568), it isdetermined that the post program of the MLCs Me11 to Me1K or Mo11 toMo1K has been completed.

The program method according to the present invention will be describedin detail with reference to FIGS. 17 to 31.

FIG. 17 is a flowchart illustrating a program method according to afirst embodiment of the present invention. The program method is relatedto program of MLCs.

One (e.g., WL1) of the word lines WL1 to WLJ is selected (601). As astart program voltage (refer to VPA in FIG. 23) is applied to theselected word line WL1, the MLCs Me11 to Me1K or Mo11 to Mo1K connectedto the selected word line WL1 are programmed (602). Thereafter, MLCs(e.g., Me11 to Me15 or Mo11 to Mo15), each having threshold voltageslower than a predetermined voltage, of the MLCs Me11 to Me1K or Mo11 toMo1K, is selected (603). The step (603) will be described in more detailbelow with reference to FIG. 18.

The lower bit register 230 of each of the page buffers PB1 to PBK sensesa voltage (e.g., VCC) of the sensing node SO in response to the readcontrol signal (LREAD1) and stores the lower sensing data (SL1) of logic“0” depending on the sensing result, so that it is initialized.

Thereafter, as a verify voltage (refer to PV0 or PVN in FIG. 23) isapplied to the selected word line WL1, data (not shown) are read fromthe MLCs Me11 to Me1K or Mo11 to Mo1K (611). At this time, the verifyvoltage (PV0) can be set to be lower than a verify voltage (refer to PV1in FIG. 26) and the verify voltage (PVN) can be set to a negativevoltage. The predetermined voltage can be higher than or the same as theverify voltage (PV0 or PVN).

The page buffers PB1 to PBK generate the verify data (LVD1 to LVDK),respectively, based on the read data (612). This will be described inmore detail.

The lower bit register 230 of the page buffers PB1 to PBK senses avoltage of the sensing node SO, which is decided according to the readdata, in response to the read control signal (LREAD2) and stores thelower sensing data (SL2 b) depending on the sensing result.

For example, when the read data are logic “1” (i.e., when a thresholdvoltage of a corresponding MLC is higher than the verify voltage (PV0 orPVN)), the lower bit register 230 stores the lower sensing data (SL2 b)(i.e., the inverted lower sensing data (SL2) of logic “1”) of logic “0”.Meanwhile, when the read data are logic “0” (i.e., the threshold voltageof the MLC is lower than the verify voltage (PV0 or PVN)), the lower bitregister 230 maintains the storage state of the lower sensing data (SL1)of logic “0” (i.e., an initialization state). The lower sensing data(SL1) of logic “0”, which are stored in the lower bit register 230, areused as program data in a subsequent program step (604).

The second verify circuit 260 of each of the page buffers PB1 to PBKgenerates verify data (one of LVD1 to LVDK) in response to the lowersensing data (SL1) or the inverted lower sensing data (SL2) receivedfrom the lower bit register 230. For example, the second verify circuit260 can generate verify data (one of LVD1 to LVDK) of logic “1” inresponse to the lower sensing data (SL1), and the second verify circuit260 can generate verify data (one of LVD1 to LVDK) of logic “0” inresponse to the inverted lower sensing data (SL2).

Thereafter, the data compare circuit (not shown) determines whether eachof the verify data (LVD1 to LVDK) is logic “1” (613). It is determinedthat MLCs (e.g., Me11 to Me15 or Mo11 to Mo15) corresponding to verifydata (e.g., LVD1 to LVD5) of logic “1” have threshold voltages lowerthan a predetermined voltage (614).

Furthermore, it is determined that MLCs (e.g., Me16 to Me1K or Mo16 toMo1K) corresponding to verify data (e.g., LVD6 to LVDK), which are notlogic “1”, have threshold voltages higher than a predetermined voltage(615).

As a result, the MLCs Me11 to Me15 or Mo11 to Mo15, each havingthreshold voltages lower than the predetermined voltage, of the MLCsMe11 to Me1K or Mo11 to Mo1K, can be filtered.

Referring back to FIG. 17, as a pre-program voltage (VPE) higher thanthe start program voltage (VPA) is applied to the selected word lineWL1, the selected MLCs Me11 to Me15 or Mo11 to Mo15 are programmed(604). The pre-program voltage (VPE) can be set to be higher than thestart program voltage (VPA) and can be set to be lower than or the sameas the highest program voltage (refer to VPT in FIG. 23).

At step (604), the page buffers PB1 to PB6 output the lower sensing data(SL1) of logic “0”, which are stored in the lower bit register 230 inthe step (612), to the bit lines BLe11 to BLe15 or BLo11 to BLo15,respectively, as program data through the sensing node SO in response tothe transmission control signal (SPGM).

Meanwhile, when the selected MLCs Me11 to Me15 or Mo11 to Mo15 areprogrammed, program into non-selected MLCs Me16 to Me1K or Mo16 to Mo1Kis prohibited (605). In more detail, the page buffers PB6 to PBK outputthe inverted lower sensing data (SL2) of logic “1”, which are stored inthe lower bit register 230 in the step (612), to the bit lines BLe17 toBLe1K or BLo17 to BLo1K, respectively, as program prohibit data throughthe sensing node SO in response to the transmission control signal(SPGM).

Thereafter, as program voltages (VP1 to VPT), which gradually rise fromthe start program voltage (VPA) at the ratio of the step voltage (VS),are sequentially applied to the selected word line WL1, the MLCs Me11 toMe1K or Mo11 to Mo1K are additionally programmed (606).

FIG. 19 is a detailed flowchart illustrating the process (606) shown inFIG. 19.

Referring to FIG. 19, as first program voltages (VP1 to VPR) (R is aninteger), which gradually rise from the start program voltage (VPA) atthe ratio of the step voltage (VS), are sequentially applied to theselected word line WL1, the MLCs Me11 to Me1K or Mo11 to Mo1K are firstprogrammed (620).

Furthermore, as second program voltages (VP(R+1) to VPS) (S is aninteger) that gradually rise from the first program voltage (VPR), whichhas finally risen in the step (620) at the ratio of the step voltage(VS), are applied to the word line WL1, the MLCs Me11 to Me1K or Mo11 toMo1K are second programmed (630).

Furthermore, as third program voltages (VP(S+1) to VPT) (T is aninteger) that gradually rise from the first program voltage (VPR), whichhas finally risen in the step (630) at the ratio of the step voltage(VS), are applied to the word line WL1, the MMLCs Me11 to Me1K or Mo11to Mo1K are third programmed (640).

FIG. 20 is a detailed flowchart illustrating the process (620) shown inFIG. 19.

Referring to FIG. 20, the first program voltage (VP1) is applied to theselected word line WL1 (621). Though not shown in FIG. 20, the lower bitregister 230 of each of the page buffers PB1 to PBK is in aninitialization state (i.e., a state where the lower sensing data (SL1)of logic “0” are stored) in response to the read control signal (LREAD1)prior to the step (621).

Furthermore, input data (D1 b or D2) are stored in the upper bitregister 220 of each of the page buffers PB1 to PBK. Thereafter, thedata pass circuit 270 of each of the page buffers PB1 to PBK transfersthe input data (D1 b or D2) stored in the upper bit register 220 to thelower bit register 230 in response to the transmission control signal(MPGM).

The lower bit register 230 senses a voltage of the sensing node SO,which is decided according to the input data (D1 b or D2), in responseto the read control signal (LREAD2).

For example, when the input data (D1 b or D2) are logic “1”, the lowerbit register 230 can store the lower sensing data (SL2 b) of the logic“0”, which are generated from the node Q3. To the contrary, when theinput data (D1 b or D2) are logic “0”, the lower bit register 230 iskept to an initialization state (i.e., a state where the lower sensingdata (SL1) of logic “0” are stored).

Therefore, when the first program voltage (VP1) is applied to the wordline WL1, the data pass circuits 270 of the page buffers PB1 to PBKoutput the lower sensing data (SL1) of logic “0” (or the inverted lowersensing data (SL2 b) of logic “1”), which are stored in the lower bitregister 230, to the bit lines BLe11 to BLe1K or BLo11 to BLo1K,respectively, as program data through the sensing node SO n response tothe transmission control signal (SPGM). As a result, the MLCs Me11 toMe1K or Mo11 to Mo1K are programmed.

Thereafter, as a verify voltage (refer to PV1, FIGS. 26 and 23) isapplied to the word line WL1, data (not shown) are read from the MLCsMe11 to Me1K or Mo11 to Mo1K (622).

The page buffers PB1 to PBK generate the verify data (LVD1 to LVDK)based on the read data (623). The operation of the page buffers PB1 toPBK in the step (623) is substantially the same as that of the pagebuffers PB1 to PBK in the step (612), which has been described earlier.Description thereof will be omitted.

The data compare circuit determines whether the verify data (LVD1 toLVDK) are all logic “0” (624). If the verify data (LVD1 to LVDK) are notall logic “0” in the step (624), the first program voltage (VP1) isincreased as much as the step voltage (VS) (625).

Thereafter, the first program voltage (VP2) increased in the step (625)is applied to the word line WL1. The steps (621 to 625) are repeatedlyexecuted. Furthermore, if the verify data (LVD1 to LVDK) are all logic“0” in the step (624), the first program process (620) is finished andthe second program process (630) begins.

FIG. 21 is a detailed flowchart illustrating the process (630) shown inFIG. 19.

A second program voltage (VP(R+1)), which is the step voltage (VS)higher than the first program voltage (VPR) that has rises finally inthe step (620), is applied to the selected word line WL1 (631).

Though not shown in FIG. 21, the lower bit register 230 of each of hepage buffers PB1 to PBK is in an initialization state (i.e., a statewhere the lower sensing data (SL1) of logic “0” are stored) in responseto the read control signal (LREAD1) prior to the step (631).

Furthermore, input data (D1 b or D2) are stored in the upper bitregister 220 of each of the page buffers PB1 to PBK. Thereafter, thedata pass circuit 270 of each of the page buffers PB1 to PBK transfersthe input data (D1 b or D2) stored in the upper bit register 220 to thebit lines BLe11 to BLe1K or BLo11 to BLo1K, respectively, as programdata through the sensing node SO in response to the transmission controlsignal (MPGM).

Thereafter, as a verify voltage (refer to PV2 in FIGS. 26 and 23), whichis higher than the verify voltage (PV1), is applied to the word lineWL1, data (not shown) are read from the MLCs Me11 to Me1K or Mo11 toMo1K (632).

The page buffers PB1 to PBK generates the verify data (MVD1 to MVDK),respectively, based on the read data (633). This will be described inmore detail.

The upper bit register 220 of each of the page buffers PB1 to PBK sensesa voltage of the sensing node SO, which is decided according to each ofthe read data, in response to the read control signal (MREAD), andstores the upper sensing data (SAb) depending on the sensing result.

For example, when the read data are logic “1” (i.e., when a thresholdvoltage of a corresponding MLC is higher than the verify voltage (PV2)),the upper bit register 220 stores the upper sensing data (SAb) of logic“0” (i.e., the inverted upper sensing data (SA) of logic “1”). On theother hand, when the read data are logic “0” (i.e., when a thresholdvoltage of a corresponding MLC is lower than the verify voltage (PV2)),the upper bit register 220 maintains the storage state of the input data(D1 b or D2).

The first verify circuit 250 of the page buffers PB1 to PBK generatesverify data (one of MVD1 to MVDK) in response to the upper sensing data(SA) or the input data (D1 b or D2) received from the upper bit register220.

For example, the first verify circuit 250 can generate verify data (oneof MVD1 to MVDK) of logic “0” in response to the upper sensing data(SA), and can generate verify data (one of MVD1 to MVDK) of logic “1” inresponse to the input data (D1 b or D2).

A data compare circuit (not shown) determines whether the verify data(MVD1 to MVDK) are all logic “0” (634). If the verify data (MVD1 toMVDK) are not all logic “0” in the step (634), the second programvoltage (VP(R+1)) is increased by the step voltage (VS) (635).

Thereafter, the second program voltage (VP(R+2)) that has risen in thestep (635) is supplied to the word line WL1 and the steps (631 to 635)are repeatedly executed.

Meanwhile, if the verify data (MVD1 to MVDK) are all logic “0” in thestep (634), the second program process (630) is finished and the thirdprogram process (640) begins.

FIG. 22 is a detailed flowchart illustrating the process (640) shown inFIG. 19.

A third program voltage (VP(S+1)), which is the step voltage (VS) higherthan the second program voltage (VPS) that has risen in the step (630),is applied to the selected word line WL1 (641). Though not shown in FIG.22, the lower bit register 230 of each of the page buffers PB1 to PBK isinitialized in response to the read control signal (LREAD1) prior to thestep (641).

Furthermore, the input data (D1 b or D2) are stored in the upper bitregister 220 of each of the page buffers PB1 to PBK. Thereafter, whenthe same read voltage as the verify voltage (PV1) is applied to the wordline WL1, data (i.e., lower bit data) are read from the MLCs Me11 toMe1K or Mo11 to Mo1K. At this time, the lower bit register 230 sensesthe lower bit data in response to the read control signal (LREAD2) andstores the lower sensing data (SL2 b) depending on the sensing result.

Furthermore, the data pass circuit 270 of each of the page buffers PB1to PBK transfers the input data (D1 b or D2), which are stored in theupper bit register 220, to the lower bit register 230 in response to thetransmission control signal (MPGM). The lower bit register 230 senses avoltage of the sensing node SO, which is decided according to the inputdata (D1 b or D2), in response to the read control signal (LREAD2) andstores the lower sensing data (SL2 b) according to the sensing result.

Thereafter, the data pass circuits 270 of the page buffers PB1 to PBKoutput the input data (D1 b or D2) stored in the upper bit register 220to the bit lines BLe11 to BLe1K or BLo11 to BLo1K, respectively, asprogram data through the sensing node SO. As a result, the MLCs Me11 toMe1K or Mo11 to Mo1K are programmed.

As a verify voltage (PV3 in FIGS. 26 and 23) higher than the verifyvoltage (PV2) is applied to the word line WL1, data (not shown) are readfrom the MLCs Me11 to Me1K or Mo11 to Mo1K (642).

The page buffers PB1 to PBK generate the verify data (LVD1 to LVDK),respectively, based on the read data (643). This will be described inmore detail. The lower bit register 220 of the page buffers PB1 to PBKsenses a voltage of the sensing node SO, which is decided according toeach of the read data, in response to the read control signal (LREAD2),and stores the lower sensing data (SL2 b) depending on the sensingresult.

For example, when the read data are logic “1” (i.e., a threshold voltageof a corresponding MLC is higher than the verify voltage (PV3)), thelower bit register 230 can store the lower sensing data (SL2 b) of thelogic “0”. To the contrary, when the read data are logic “0” (i.e., athreshold voltage of a corresponding MLC is lower than the verifyvoltage (PV3)), the lower bit register 230 maintains the stores lowersensing data (SL1 or SL2) based on the input data (D1 b or D2) or thelower bit data prior to the step (641).

The second verify circuit 260 of each of the page buffers PB1 to PBKgenerates verify data (one of LVD1 to LVDK) in response to the lowersensing data (SL1 or SL2) received from the lower bit register 230. Forexample, the second verify circuit 260 can generate verify data (one ofLVD1 to LVDK) of logic “1” in response to the lower sensing data (SL1)and can generate verify data (one of LVD1 to LVDK) of logic “0” inresponse to the lower sensing data (SL2).

A data compare circuit determines whether the verify data (LVD1 to LVDK)are logic “0” (644). If the verify data (LVD1 to LVDK) are not all logic“0” in the step (644), the third program voltage (VP(S+1)) is increasedas much as the step voltage (VS) (645).

Thereafter, the third program voltage (VP(S+2)) that has risen in thestep (645) is applied to the word line WL1, and the steps (641 to 645)are repeatedly executed. Meanwhile, if the verify data (LVD1 to LVDK)are all logic “0” in the step (644), the third program process (640) isfinished.

FIG. 24 is a flowchart illustrating a program method according to asecond embodiment of the present invention. This method is related toprogram of MLCs.

One (e.g., WL1) of the word lines WL1 to WLJ is selected (701). As astart program voltage (refer to VA1 in FIG. 25) is applied to theselected word line WL1, the MLCs Me11 to Me1K or Mo11 to Mo1K connectedto the word line WL1 are programmed (702).

The operation of the page buffers PB1 to PBK in the step (702) is thesame as that of the page buffers PB1 to PBK in the step (620), whichhave been described with reference to FIG. 20. Description thereof willbe omitted.

Thereafter, it is determined whether the number of program cycles, whichis being executed, is P (703). If the number of program cycles, which isbeing executed, is not P in the step (703), the start program voltage(VA1) is increased as much as the step voltage (VS) (704). As a result,the word line WL1 is supplied with a start program voltage (VA2) thathas risen from the start program voltage (VA1) as much as the stepvoltage (VS).

Thereafter, the steps (701 to 704) are repeatedly executed until thenumber of the program cycle becomes P. When the number of the programcycle becomes P, MLCs (e.g., Me11 to Me15 or Mo11 to Mo15), each havingthreshold voltages lower than a predetermined voltage, of the MLCs Me11to Me1K or Mo11 to Mo1K, are selected (705).

As the selected word line WL1 is supplied with the pre-program voltage(VPE), the selected MLCs Me11 to Me15 or Mo11 to Mo15 are programmed(706). The pre-program voltage (VPE) can be set to be higher than astart program voltage (refer to VAP in FIG. 25) and to be lower than orthe same as the highest program voltage (refer to VNT in FIG. 25).

Meanwhile, when the selected MLCs Me11 to Me15 or Mo11 to Mo15 areprogrammed, program into non-selected MLCs Me16 to Me1K or Mo16 to Mo1Kis prohibited (707).

Thereafter, as the program voltages (VN1 to VNT) that gradually risefrom the start program voltage (VAP) at the ratio of the step voltage(VS) are sequentially applied to the selected word line WL1, the MLCsMe11 to Me1K or Mo11 to Mo1K are additionally programmed (708).

The steps (705 to 708) are the same as the steps (603 to 606), whichhave been described with reference to FIG. 17. Description thereof willbe omitted.

As described above, in the program method according to the presentinvention, selected MLCs are pre-programmed by selecting only MLCshaving threshold voltages lower than a predetermined voltage (i.e., MLCshaving a slow program speed) and applying a pre-program voltage higherthan a program voltage, which has been previously applied, to a wordline. It is thus possible to shorten an overall program time.

FIG. 27 is a flowchart illustrating a program method according to athird embodiment of the present invention. This method is related toprogram of SLCs.

One (e.g., WL1) of the word lines WL1 to WLJ is selected (601′).

As the selected word line WL1 is supplied with a start program voltage(refer to VSA in FIG. 28), SLCs Me11 to Me1K or Mo11 to Mo1K connectedto the selected word line WL1 are programmed (602′).

Thereafter, SLCs (e.g., Me11 to Me15 or Mo11 to Mo15), each havingthreshold voltages lower than a predetermined voltage, of the SLCs Me11to Me1K or Mo11 to Mo1K, are selected (603′). Though detailed steps ofthe step (603′) has not been shown, the step (603′) can be performed inthe same manner as that described with reference to FIG. 18.

The lower bit register 230 of each of the page buffers PB 1 to PBKsenses a voltage (e.g., VCC) of the sensing node SO in response to theread control signal (LREAD1) and stores the lower sensing data (SL1) oflogic “0” depending on the sensing result, so that it is initialized.

Thereafter, as the selected word line WL1 is supplied with a verifyvoltage (refer to PV0 or PVN in FIG. 31), data (not shown) are read fromthe SLCs Me11 to Me1K or Mo11 to Mo1K. At this time, the verify voltage(PV0) can be set to be lower than a verify voltage (refer to PV1 in FIG.31) and the verify voltage (PVN) can be set to a negative voltage. Thepredetermined voltage can be higher than or the same as the verifyvoltage (PV0 or PVN).

The page buffers PB1 to PBK generates the verify data (LVD1 to LVDK)based on the read data. This will be described in more detail.

The lower bit register 230 of each of the page buffers PB1 to PBK sensesa voltage of the sensing node SO, which is decided according to the readdata, in response to the read control signal (LREAD2) and stores thelower sensing data (SL2 b) depending on the sensing result.

For example, when the read data are logic “1” (i.e., a threshold voltageof a corresponding SLC is higher than the verify voltage (PV0 or PVN)),the lower bit register 230 stores the lower sensing data (SL2 b) oflogic “0”□ (i.e., the inverted lower sensing data (SL2) of logic “1”).Meanwhile, when the read data are logic “0” (i.e., a threshold voltageof a corresponding SLC is lower than the verify voltage (PV0 or PVN)),the lower bit register 230 maintains the storage state of the lowersensing data (SL1) of logic “0” (i.e., an initialization state).

The lower sensing data (SL1) of logic “0”, which are stored in the lowerbit register 230, are used as program data in a subsequent program step(604′).

The second verify circuit 260 of each of the page buffers PB1 to PBKgenerates verify data (one of LVD1 to LVDK) in response to the lowersensing data (SL1) or the inverted lower sensing data (SL2) receivedfrom the lower bit register 230.

For example, the second verify circuit 260 can generate verify data (oneof LVD1 to LVDK) of logic “1” in response to the lower sensing data(SL1) and can generate verify data (one of LVD1 to LVDK) of logic “0” inresponse to the inverted lower sensing data (SL2).

Thereafter, a data compare circuit (not shown) determines whether eachof the verify data (LVD1 to LVDK) is logic “1”. SLCs (e.g., Me11 to Me15or Mo11 to Mo15), which correspond to the verify data (e.g., LVD1 toLVD5) of logic “1”, determined to have threshold voltages lower than apredetermined voltage.

Furthermore, SLCs (e.g., Me16 to Me1K or Mo16 to Mo1K) corresponding tothe verify data (e.g., LVD6 to LVDK) which are not logic “1” aredetermined to have threshold voltages higher than the predeterminedvoltage.

As a result, SLCs Me11 to Me15 or Mo11 to Mo15, each having thresholdvoltages lower than the predetermined voltage, of the SLCs Me11 to Me1Kor Mo11 to Mo1K are filtered in the step (603′).

As the selected word line WL1 is supplied with a pre-program voltage(VPE) higher than the start program voltage (VSA), the selected SLCsMe11 to Me15 or Mo11 to Mo15 are programmed (604′). The pre-programvoltage (VPE) can be set to be higher than the start program voltage(VSA) and can be set to be lower than or the same as the highest programvoltage (refer to VSLF in FIG. 28).

Meanwhile, when the selected SLCs Me11 to Me15 or Mo11 to Mo15 areprogrammed, program into non-selected SLCs Me16 to Me1K or Mo16 to Mo1Kis prohibited (605′)

Thereafter, program voltages (VSL1 to VSLF) (F is an integer) thatgradually increase from the start program voltage (VSA) at the ratio ofthe step voltage (VS) are sequentially applied to the selected word lineWL1, the SLCs Me11 to Me1K or Mo11 to Mo1K are additionally programmed(606′).

FIG. 29 is a flowchart illustrating a program method according to afourth embodiment of the present invention. This method is concernedwith program of SLCs.

One (e.g., WL1) of the word lines WL1 to WLJ is selected (701′). As astart program voltage (refer to VSA1 in FIG. 30) is applied to theselected word line WL1, the SLCs Me11 to Me1K or Mo11 to Mo1K connectedto the word line WL1 are programmed (702′).

Thereafter, it is determined whether the number of program cycles, whichis being executed, is P (703′). If the number of program cycles, whichis being executed, is not P in the step (703′), the start programvoltage (VSA1) is increased as much as the step voltage (VS) (704′). Asa result, the word line WL1 is supplied with a start program voltage(VSA2) that has risen from the start program voltage (VSA1) as much asthe step voltage (VS).

Thereafter, the steps (701′ to 704′) are repeatedly executed until thenumber of program cycle becomes P. When the number of the program cyclebecomes P, SLCs (e.g., Me11 to Me15 or Mo11 to Mo15), each havingthreshold voltages lower than a predetermined voltage, of the SLCs Me11to Me1K or Mo11 to Mo1K, are selected (705′).

As the selected word line WL1 is supplied with the pre-program voltage(VPE), the selected SLCs Me11 to Me15 or Mo11 to Mo15 are programmed(706′). The pre-program voltage (VPE) can be set to be higher than astart program voltage (refer to VAP in FIG. 30) and to be lower than orthe same as the highest program voltage (refer to VBH in FIG. 30) (H isan integer).

Meanwhile, when the selected SLCs Me11 to Me15 or Mo11 to Mo15 areprogrammed, program into non-selected SLCs Me16 to Me1K or Mo16 to Mo1Kis prohibited (707′).

Thereafter, as the program voltages (VB1 to VBH) that gradually risefrom the start program voltage (VAP) at the ratio of the step voltage(VS) are sequentially applied to the selected word line WL1, the SLCsMe11 to Me1K or Mo11 to Mo1K are additionally programmed (708′).

The steps (705′ to 708′) are the same as the steps (603 to 606), whichhave been described with reference to FIG. 27. Description thereof willbe omitted.

As described above, in the program method according to the presentinvention, selected SLCs are pre-programmed by selecting only SLCshaving threshold voltages lower than a predetermined voltage (i.e., SLCshaving a slow program speed) and applying a pre-program voltage higherthan a program voltage, which has been previously applied, to a wordline. It is thus possible to shorten an overall program time.

FIG. 32 is a flowchart illustrating a program method according to afifth embodiment of the present invention.

One (e.g., WL1) of the word lines WL1 to WLJ is selected (810). As firstprogram voltages (VG2 to VGX) (X is an integer) (refer to Vs1 in FIG.36), which gradually increase from a start program voltage (VG1) at theratio of a first step voltage (refer to Vs1 in FIG. 36) (e.g., 0.2V),are sequentially applied to the selected word line WL1, the MLCs Me11 toMe1K or Mo11 to Mo1K are first programmed (820).

Thereafter, second program voltages (VG(X+1) to VGY) (Y is an integer)(refer to FIG. 36), which gradually increase from a first programvoltage (VGX) that has finally risen in the first program step (820) atthe ratio of the first step voltage (Vs1), are sequentially applied tothe selected word line WL1, the MLCs Me11 to Me1K or Mo11 to Mo1K aresecond programmed (830).

Thereafter, third program voltages (VG(Y+1) to VGZ) (Z is an integer)(refer to FIG. 36), which gradually increase from a program voltage(VGY) that has finally risen in the second program step (830) at theratio of a second step voltage (refer to Vs2 in FIG. 36) (e.g., 0.5V),are sequentially applied to the selected word line WL1, the MLCs Me11 toMe1K or Mo11 to Mo1K are second programmed (840).

The second step voltage (Vs2) (e.g., 0.5V to 0.95V) can be set to behigher than the first step voltage (Vs1) (e.g., 0.1V to 0.3V).Alternately, the first step voltage (Vs1) can be set to be higher thanthe second step voltage (Vs2).

FIG. 33 is a detailed flowchart illustrating the process (820) shown inFIG. 31.

The selected word line WL1 is supplied with the first program voltage(VG1) (821). Thereafter, as the word line WL1 is supplied with theverify voltage (PV1), data (not shown) are read from the MLCs Me11 toMe1K or Mo11 to Mo1K (822).

The page buffers PB1 to PBK generates the verify data (LVD1 to LVDK),respectively, based on the read data (823).

A data compare circuit determines whether the verify data (LVD1 to LVDK)are all logic “0” (824).

If the verify data (LVD1 to LVDK) are not all logic “0” in the step(824), the first program voltage (VG1) is increased as much as the firststep voltage (Vs1) (825).

Thereafter, the first program voltage (VG2) that has increased in thestep (825) is supplied to the word line WL1, and the steps (821 to 825)are repeatedly performed.

Meanwhile, if the verify data (LVD1 to LVDK) are all logic “0” in thestep (824), the first program process (820) is finished and the secondprogram process (830) begins.

The operation of the page buffers PB1 to PBK in the steps (821 to 825)is the same as that of the page buffers PB1 to PBK in the steps (621 to625), which have been described with reference to FIG. 20. Descriptionthereof will be omitted.

FIG. 34 is a detailed flowchart illustrating the process (830) shown inFIG. 31.

A second program voltage (VG(X+1)), which is the first step voltage(Vs1) higher than the first program voltage (VGX) that has finally risenin the step (820), is applied to the selected word line WL1 (831).

Thereafter, as the word line WL1 is supplied with a verify voltage (PV2)higher than the verify voltage (PV1), data (not shown) are read from theMLCs Me11 to Me1K or Mo11 to Mo1K (832). The page buffers PB1 to PBKgenerate verify data (MVD1 to MVDK), respectively, based on the readdata (833).

A data compare circuit determines whether the verify data (MVD1 to MVDK)are all logic “0” (834).

If the verify data (MVD1 to MVDK) are not all logic “0” in the step(834), the second program voltage (VG(X+1)) is increased as much as thefirst step voltage (Vs1) (835).

Thereafter, the second program voltage (VG(X+2)) that has risen in thestep (835) is supplied to the word line WL1. The steps (831 to 835) arerepeatedly executed.

Meanwhile, if the verify data (MVD1 to MVDK) are all logic “0” in thestep (834), the second program process (830) is finished and the thirdprogram process (840) begins.

The operation of the page buffers PB1 to PBK in the steps (831 to 835)is the same as that of the page buffers PB1 to PBK in the steps (631 to635), which have been described with reference to FIG. 21. Descriptionthereof will be omitted for simplicity.

FIG. 35 is a detailed flowchart illustrating the process (840) shown inFIG. 31.

A third program voltage (VG(Y+1)), which is the second step voltage(Vs2) higher than the second program voltage (VGY) that has finallyrisen in the step (830) is applied to the selected word line WL1 (841).

As the word line WL1 is supplied with a verify voltage (PV3) higher thanthe verify voltage (PV2), data (not shown) are read from the MLCs Me11to Me1K or Mo11 to Mo1K (842). The page buffers PB1 to PBK generateverify data (LVD1 to LVDK), respectively, based on the read data (843).

A data compare circuit determines whether the verify data (LVD1 to(LVDK) are all logic “0” (844). If the verify data (LVD1 to LVDK) arenot all logic “0” step (844), the third program voltage (VG(Y+1)) isincreased as much as the second step voltage (Vs2) (845).

Thereafter, a third program voltage (VG(Y+2)) that has risen in the step(845) is applied to the word line WL1. The steps (841 to 845) arerepeatedly performed.

Meanwhile, Ii the verify data (LVD1 to LVDK) are all logic “0” in thestep (844), the third program process (840) is finished. The operationof the page buffers PB1 to PBK in the steps (841 to 845) is the same asthat of the page buffers PB1 to PBK in the steps (641 to 645), whichhave been described with reference to FIG. 22. Description thereof willbe omitted.

If the step voltage in the first and second program processes (i.e., theprocess in which data “10” or “00” are programmed into MLCs) is set tobe higher than the step voltage in the third program process (i.e., theprocess in which data “01” are programmed into the MLC) as describedabove, an overall program time can be shortened. Furthermore, in thefirst and second program processes, MLCs can be prevented from beingover-programmed by a high program voltage.

As described above, in the erase process according to the presentinvention, MLCs are pre-programmed so that a voltage range in whichthreshold voltages of the MLCs are distributed is reduced. Therefore, afail occurrence ratio when erasing the MLCs can be reduced and thresholdvoltage distribution of the MLCs can be improved. It is thus possible toreduce an overall program time in a subsequent program operation.

Furthermore, in the program method according to the present invention,only MLCs having a slow program speed are selected and programmed, andthe program process of the ISPP method is then performed. This resultsin a reduced overall program time.

Furthermore, in the program method according to the present invention,step voltages (i.e., an increment width of a program voltage) beforethreshold voltages of MLCs become a predetermined verify voltage andafter the threshold voltages of the MLCs become the predetermined verifyvoltage are set to be different from each other in the program processof the ISPP method. It is thus possible to reduce an overall programtime.

Although the foregoing description has been made with reference to thepreferred embodiments, it is to be understood that changes andmodifications of the present invention may be made by the ordinaryskilled in the art without departing from the spirit and scope of thepresent invention and appended claims.

1. A program method of a flash memory device including a plurality ofmemory cells that share word lines and bit lines, the program methodcomprising the steps of: selecting one of the word lines; programmingmemory cells connected to the selected word line, of the plurality ofmemory cells, by applying a start program voltage to the selected wordline; selecting memory cells respectively having threshold voltageslower than a predetermined voltage based on a first verify voltage, ofthe memory cells connected to the selected word line; programming theselected memory cells by applying a pre-program voltage to the selectedword line after applying the start program voltage, wherein thepre-program voltage is higher than the start program voltage;prohibiting programming into the remaining memory cells other than theselected memory cells when the selected memory cells are programmed; andadditionally programming the memory cells connected to the selected wordline, while supplying a program voltage that gradually rises from thestart program voltage at the ratio of a step voltage to the selectedword line, the additionally programming being verified with a secondverify voltage, wherein the second verify voltage is higher than thefirst verify voltage.
 2. The program method as claimed in claim 1,wherein the predetermined voltage is 0V.
 3. The program method asclaimed in claim 1, wherein the pre-program voltage is higher than thestart program voltage, and is lower than or the same as a programvoltage that has risen by a maximum in the additionally programmingstep.
 4. The program method as claimed in claim 1, wherein the step ofselecting the memory cells includes the steps of: reading first datafrom the memory cells connected to the selected word line by applyingthe first verify voltage to the selected word line; generating firstverify data based on the first data; and filtering memory cellsrespectively having threshold voltages lower than the predeterminedvoltage, of the memory cells connected to the selected word line,according to logic values of the first verify data, wherein in the stepof generating the first verify data, sensing data generated based onsome of the first data are stored in page buffers of the filtered memorycells, respectively, as program data through some of the bit lines. 5.The program method as claimed in claim 4, wherein the first verifyvoltage is lower than or the same as the predetermined voltage.
 6. Theprogram method as claimed in claim 4, wherein the first verify voltageis a negative voltage.
 7. The program method as claimed in claim 4,wherein the memory cells are MLCs.
 8. The program method as claimed inclaim 7, wherein the additionally programming step includes the stepsof: first programming the MLCs connected to the selected word line byapplying a first program voltage, which gradually rises from the startprogram voltage at the ratio of the step voltage, to the selected wordline; second programming the MLCs connected to the selected word line byapplying a second program voltage gradually rising from the firstprogram voltage, which has finally risen in the first program step, atthe ratio of the step voltage to the selected word line; and thirdprogramming the MLCs connected to the selected word line by applying athird program voltage gradually rising from the second program voltage,which has finally risen in the second program step, at the ratio of thestep voltage to the selected word line.
 9. The program method as claimedin claim 8, wherein the first programming step includes: a first supplystep of supplying the first program voltage to the selected word line sothat the MLCs connected to the selected word line are programmed; a stepof reading first data from the MLCs connected to the selected word lineby applying the second verify voltage to the selected word line; a stepof generating first verify data based on the first data; a firstdetermination step of determining whether the program of the MLCsconnected to the selected word line has been completed according tologic values of the first verify data; and a step of repeating the firstsupply step to the first determination step until the program of theMLCs connected to the selected word line is completed, wherein the firstprogram voltage, which is applied to the selected word line in the firstsupply step performed after the first determination step, is a stepvoltage higher than the first program voltage, which is applied to theselected word line in the first instance of the first supply stepexecuted prior to the first determination step.
 10. The program methodas claimed in claim 8, wherein the second programming step includes: asecond supply step of supplying the second program voltage to theselected word line so that the MLCs connected to the selected word lineare programmed; a step of reading second data from the MLCs connected tothe selected word line by applying a third verify voltage to theselected word line; a step of generating second verify data based on thesecond data; a second determination step of determining whether theprogram of the MLCs connected to the selected word line has beencompleted according to logic values of the second verify data; and astep of repeating the second supply step to the second determinationstep until the program of the MLCs connected to the selected word lineis completed, wherein the second program voltage, which is applied tothe selected word line in the second supply step performed after thesecond determination step, is the step voltage higher than the secondprogram voltage, which is applied to the selected word line in the firstinstance of the second supply step executed prior to the seconddetermination step.
 11. The program method as claimed in claim 10,wherein the third verify voltage is higher than the second verifyvoltage.
 12. The program method as claimed in claim 10, wherein thethird programming step includes: a third supply step of supplying thethird program voltage to the selected word line so that the MLCsconnected to the selected word line are programmed; a step of readingthird data from the MLCs connected to the selected word line by applyinga fourth verify voltage to the selected word line; a step of generatingthird verify data based on the third data; a third determination step ofdetermining whether the program of the MLCs connected to the selectedword line has been completed according to logic values of the thirdverify data; and a step of repeating the third supply step to the thirddetermination step until the program of the MLCs connected to theselected word line is completed, wherein the third program voltage,which is applied to the selected word line in the third supply stepperformed after the third determination step, is the step voltage higherthan the first instance of the third program voltage, which is appliedto the selected word line in the third supply step executed prior to thethird determination step.
 13. The program method as claimed in claim 12,wherein the fourth verify voltage is higher than the third verifyvoltage.
 14. The program method as claimed in claim 4, wherein thememory cells are SLCs.
 15. The program method as claimed in claim 14,wherein the additionally programming step includes the steps of:applying a first program voltage, which has risen as much as the stepvoltage from the start program voltage, to the selected word line sothat the SLCs connected to the selected word line are programmed;reading data from the SLCs connected to the selected word line byapplying the second verify voltage to the selected word line; generatingverify data based on the data; determining whether the program of theSLCs connected to the selected word line has been completed according tologic values of the verify data; and repeating the supply step to thedetermination step until the program of the SLCs connected to theselected word line is completed, wherein the first program voltageapplied to the selected word line in the supply step executed after thedetermination step is the step voltage higher than the first instance ofthe first program voltage applied to the selected word line in thesupply step executed prior to the determination step.
 16. A programmethod of a flash memory device including a plurality of memory cellsthat share word lines and bit lines, the program method comprising thesteps of: selecting one of the word lines; programming memory cellsconnected to the selected word line by applying a start program voltagethat gradually rises at the ratio of a step voltage to the selected wordline in each of first to Pth (P is an integer greater than 1) programcycles, the programming being verified with a first verify voltage;selecting memory cells respectively having threshold voltages lower thana predetermined voltage based on a second verify voltage, of the memorycells connected to the selected word line, wherein the second verifyvoltage is lower than the first verify voltage; programming the selectedmemory cells by applying a pre-program voltage to the selected wordline; prohibiting programming into the remaining memory cells other thanthe selected memory cells when the selected memory cells are programmed;and additionally programming the memory cells connected to the selectedword line, while supplying a program voltage that gradually rises fromthe start program voltage that has finally risen in the step ofprogramming the memory cells at the ratio of the step voltage to theselected word line, the additionally programming being verified with thefirst verify voltage.
 17. The program method as claimed in claim 16,wherein the P is less than or equal to
 3. 18. The program method asclaimed in claim 16, wherein the pre-program voltage is higher than thestart program voltage as raised in the additionally programming step ofthe memory cells, or lower than or the same as a program voltage thathas risen by a maximum in the additionally programming step.
 19. Theprogram method as claimed in claim 16, wherein the memory cells areMLCs.
 20. The program method as claimed in claim 19, wherein theadditionally programming step includes the steps of: first programmingthe MLCs connected to the selected word line by applying a programvoltage that gradually rises from the start program voltage that hasfinally risen in the step of programming the memory cells at the ratioof the step voltage to the selected word line; second programming theMLCs connected to the selected word line by applying a second programvoltage that gradually rises from the first program voltage that hasfinally risen in the first program step at the ratio of the step voltageto the selected word line; and third programming the MLCs connected tothe selected word line by applying a third program voltage thatgradually rises from the second program voltage that has finally risenin the second program step at the ratio of the step voltage to theselected word line.
 21. The program method as claimed in claim 16,wherein the memory cells are SLCs.
 22. The program method as claimed inclaim 21, wherein the additionally programming step includes the stepsof: applying a first program voltage, which has risen as much as thestep voltage from the start program voltage that has finally risen inthe step of programming the memory cells, to the selected word line sothat the SLCs connected to the selected word line are programmed;reading data from the SLCs connected to the selected word line byapplying the first verify voltage to the selected word line; generatingverify data based on the data; determining whether the program of theSLCs connected to the selected word line has been completed according tologic values of the verify data; and repeating the supply step to thedetermination step until the program of the SLCs connected to theselected word line is completed, wherein the first program voltageapplied to the selected word line in the supply step executed after thedetermination step is the step voltage higher than the first instance ofthe first program voltage applied to the selected word line in thesupply step executed prior to the determination step.